首页期刊信息编委及顾问期刊发行联系方式使用帮助常见问题ENGLISH
位置:首页 >> 正文
HVO2薄膜相变的特性及热稳定性
作者:李昆鹏?祝柏林?王崇杰?????甘章华???
单位:(武汉科技大学?省部共建耐火材料与冶金国家重点实验室?武汉?430081)?
关键词:氢掺杂二氧化钒?薄膜?相变温度?退火处理?溅射法?热稳定性?
分类号:TN304
出版年,卷(期):页码:2019,47(8):0-0
DOI:
摘要:

?采用射频溅射磁控溅射技术在Ar+H2气氛下,以V2O5为溅射靶材在玻璃基片上制备了H掺杂VO2(HVO2)薄膜,研究了H2流量和退火处理对HVO2薄膜的结构、光电性能和热稳定性的影响。结果表明:H2流量可以控制薄膜中H的含量,微量H的掺杂使HVO2薄膜相变温度降低到室温附近,过量的H掺杂会使薄膜处于金属态。当500 ℃下退火3 h后,薄膜物相、相变等特征明显变化,此时薄膜中的H不能稳定存在于VO2晶格而溢出薄膜。当退火温度≤450 ℃、退火时间≤6 h时,薄膜保持较高的稳定性,这为室温附近使用HVO2薄膜提供了基础。另外,随H2流量增加,薄膜的平均透射率小幅度增加,最终稳定在37%左右。随着退火温度的增加,未引入H2制备的VO2薄膜的平均透射率在400 ℃退火后为30.9%,在450和500 ℃退火后为35.8%左右。H2流量为0.1~0.5 mL/min时制备的样品在3种退火温度下的透射率均保持在38%左右。

基金项目:
高性能陶瓷和超微结构国家重点实验室开放课题基金(SKL201110SIC)。
作者简介:
参考文献:

?[1] MORIN F J. Oxides which show a metal-to-insulator transition at the neel temperature[J]. Phys Rev Lett, 1959, 3(1): 34?36.??

[2] LUO Y Y, ZHU L Q, ZHANG Y X, et al. Optimization of microstructure and optical properties of VO2 thin film prepared by reactive sputtering[J]. J Appl Phys, 2013, 113(18): 1191?1198.?
[3] LIU H W, WONG L M, WANG S J, et al. Ultrafast insulator-metal phase transition in vanadium dioxide studied using optical pump–terahertz probe spectroscopy[J]. J Phys-Condens Mater, 2012, 24(41): 415604?415609.?
[4] WENTZCOVITCH R M, SCHULZ W W, ALLEN P B. Comment on "VO2: Peierls or Mott-Hubbard? A view from BAND Theory"[J]. Phys Rev Lett, 1994, 72(21): 3389?3392.?
[5] FAN S, FAN L, QIANG L, et al. The identification of defect structures for oxygen pressure dependent VO2 crystal films[J]. Appl Surf Sci, 2014, 321: 464?468.?
[6] YOON J, PARK C, PARK S, et al. Correlation between surface morphology and electrical properties of VO2, films grown by direct thermal oxidation method[J]. Appl Surf Sci, 2015, 353: 1082?1086.?
[7] YANG M, YANG Y, HONG B, et al. Suppression of structural phase transition in VO2 by epitaxial strain in vicinity of metal-insulator transition[J]. Sci Rep, 2016, 6(1): 23119?23128.?
[8] PAN X, ZHAO Y, REN G, et al. Highly conductive VO2 treated with hydrogen for supercapacitors[J]. Chem Commun, 2013, 49(38): 3943?3945.?
[9] DAI J, WANG X, HE S, et al. Low temperature fabrication of VOx thin films for uncooled IR detectors by direct current reactive magnetron sputtering method[J]. Infrared Phys Technol, 2008, 51(4): 287?291.??
[10] PARK K M, YI S, MOON S, et al. Optimum oxygen concentration for the optoelectronic properties of IR sensitive VOx, thin films[J]. Opt Mater, 2001, 17(1/2): 311?314.?
[11] BHARADWAJA S S N, VENKATASUBRAMANIAN C, FIELDHOUSE N, et al. Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed DC sputtering[J]. Appl Phys Lett, 2009, 94(22): 222110?222113.?
[12] TANG C, GEORGOPOULOS P, FINE M E, et al. Local atomic and electronic arrangements in WxV1?xO2[J]. Phys Rev B, 1985, 31(2): 1000?1011.?
[13] CAVANNA E, SEGUD J P, LIVAGE J. Optical switching of Au-doped VO2 sol-gel films[J]. Mater Res Bull, 1999, 34(2): 167?177.?
[14] HANLON T J, COATH J A, RICHARDSON M A. Molybdenum-doped vanadium dioxide coatings on glass produced by the aqueous sol-gel method[J]. Thin Solid Films, 2003, 436(2): 269?272.
[15] EYERT V. The metal-insulator transitions of VO2: A band theoretical approach[J]. Ann Phys-Berlin, 2002, 11(9): 650?704.?
[16] PAN X, ZHAO Y, REN G, et al. Highly conductive VO2 treated with hydrogen for supercapacitors[J]. Chem Commun, 2013, 49(38): 3943?3945.?
[17] ZHAO Y, KARAOALANBEBEK G, PAN X, et al. Hydrogen-doping stabilized metallic VO2(R) thin films and their application to suppress Fabry-Perot resonances in the terahertz regime[J]. Appl Phys Lett, 2014, 104(24): 241901?241906.
[18] BURDYUKH S V, STEFANOVICH G B, PERGAMENT A L, et al. Modification of the properties of vanadium dioxide by plasma-immersion ion implantation[J]. Tech Phys Lett, 2016, 42(1): 32?35.?
[19] LEE D, KIM H, JI W K, et al. Hydrogen incorporation induced the octahedral symmetry variation in VO2 films[J]. Appl Surf Sci, 2017, 396: 36?40.?
[20] FORTIER J P, BALOUKAS B, ZABEIDA O, et al. Thermochromic VO2 thin films deposited by HiPIMS[J]. Sol Energy Mater Sol Cells, 2014, 125(6): 291?296.
[21] ZHANG D, ZHU M, LIU Y, et al. High performance VO2 thin films growth by DC magnetron sputtering at low temperature for smart energy efficient window application[J]. J Alloy Compd, 2016, 659: 198–202.
[22] SUH J Y, LOPEZ R, FELDMAN L C, et al. Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films[J]. J Appl Phys, 2004, 96(2): 1209?1213.
[23] OKIMURA K, SAKAI J. Changes in lattice parameters of VO2 films grown on c-plane Al2O3 substrates across metal-insulator transition[J]. Jpn J Appl Phys, 2009, 48(4): 045504?045510.?
[24] QAZILBASH M M, BREHM M, ANDREEV G O, et al. Infrared spectroscopy and nano-imaging of the insulator-to-metal transition in vanadium dioxide[J]. Phys Rev B, 2012, 79(7): 7715?7722.?
[25] BERMUDEZ V M, WILLIAMS R T, LONG J P, et al. Photoemission study of hydrogen adsorption on vanadium dioxide near the semiconductor-metal phase transition[J]. Phys Rev B, 1992, 45(16): 9266?9271.?
[26] 梁继然, 胡明, 王晓东, 等. 纳米二氧化钒薄膜的制备及红外光学性能[J]. 物理化学学报, 2009, 25(8): 1523?1529.
LIANG J R, HU M, WANG X D, et al. Acta Phys-Chim Sin(in Chinese), 2009, 25(8): 1523?1529.
[27] YOON H, CHOI M, LIM T W, et al. Reversible phase modulation and hydrogen storage in multivalent VO2 epitaxial thin films[J]. Nat Mater, 2016, 15(10): 1113?1119.
[28] CHEN S, WANG Z, FAN L, et al. Sequential insulator-metal-insulator phase transitions of VO2 triggered by hydrogen doping[J]. Phys Rev B, 2017, 96(12): 125130?125135.
[29] ZHU B L, LV K, WANG J, et al. Characteristics of Al-doped ZnO thin films prepared in Ar+H2 atmosphere and their vacuum annealing behavior[J]. J Vac Sci Technol A, 2013, 31(6): 61513?61521
?
服务与反馈:
文章下载】【加入收藏
中国硅酸盐学会《硅酸盐学报》编辑室
京ICP备10016537号-2
京公网安备 11010802024188号
地址:北京市海淀区三里河路11号????邮政编码:100831
电话:010-57811253??57811254????
E-mail:jccs@ceramsoc.com